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ZXMN3B14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V GS = 4.5V; T A =25°C (b)
@ V GS = 4.5V; T A =70°C (b)
@ V GS = 4.5V; T A =25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
SYMBOL
V DSS
V GS
I D
I DM
I S
I SM
P D
LIMIT
30
12
3.5
2.9
2.9
16
2.4
16
1
8
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
Power Dissipation at T A =25°C
Linear Derating Factor
(b)
P D
1.5
12
W
mW/°C
Operating and Storage Temperature Range
T j , T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R JA
125
°C/W
Junction to Ambient (b)
R JA
83
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ISSUE 2 - JANUARY 2006
SEMICONDUCTORS
2
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